Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar Transistors

Peter Heymann, Matthias Rudolph, Ralf Doerner, and Friedrich Lenk
Ferdinand-Braun-Institut für Höchstfrequenztechnik,
Albert-Einstein-Straße 11, D-12489 Berlin, Germany

Published in:
IEEE MTT-S Int. Microwave Symp. Dig., 2001, pp. 1967 - 1970.

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Abstract:

Accurate low-frequency noise modeling is a prerequisite for oscillator phase-noise simulation. In this paper, the LF noise sources of GaInP/GaAs HBTs are investigated. It turns out that the 1/f-noise model must contain two sources, the base-emitter diode and the emitter resistance. Quantitatively, excess noise power at 100 kHz scales with the square of collector current-density.